Elementary Solid State Physics: Principles and Applications by M. Ali Omar

By M. Ali Omar

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133 35. R. Ramesh, H. Gilchrist, T. G. Keramidas, R. K. Fork, Appl. Phys. Lett. 63, 3592 (1994) 36. R. Ramesh, J. Lee, T. G. Keramidas, O. Auciello, Appl. Phys. Lett. 64, 2511 (1994) 37. I. Naoya, H. Yoshihiro, J. Electrochem. Soc. 151, G113 (2004) 38. S. R. G. S. 576,482, June 2003 39. R. Krauss, O. Auciello, in Materials Research Society Symposium Proceedings: “Materials Modification by Energetic Atoms and Ions”, eds. S. A. M. Rossnagel, Wasa K, vol. 268 (Pittsburgh; Materials Research Society, 1992), p.

3. Let us consider a sandwich structure comprising two ferromagnetic Co layers separated by a metallic nonmagnetic spacer as represented in Fig. 3. , electrons flow from left to right, the conduction electrons become polarized when they traverse the left polarizing ferromagnetic layer because of spin-dependent scattering phenomena taking place in this layer. 41 2 Hybrid CMOS/Magnetic Memories (MRAMs) and Logic Circuits Fig. 3 Schematic representation of the spin-transfer phenomenon Co Cu ~1nm Co As a result, the current coming out of the left Co layer (polarizing layer) has a net spin polarization parallel to the magnetization of this left layer.

T. Evans, R. Womack, IEEE J. Solid State Circuits 23, 1171 (1988) 3. F. A. Paz de Araujo, Science 246, 1400 (1989) 4. Papers S. Dey, R. Zuleeg, Ferroelectrics 108, 37 (1990) 5. in Proceedings of the 3th to 18th International Symposium on Integrated Ferroelectrics, Integrated Ferroelectrics, vol. 22, Issue 1-4 (1998) 6. K. M. J. ), in Proceedings of the 8th International Symposium on Integrated Ferroelectrics, Integrated Ferroelectrics, vols. 14, 15 and 16, 1997 7. B. A. ), in Proceedings of the 9th International Symposium on Integrated Ferroelectrics, Integrated Ferroelectrics, vols.

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