Design for Manufacturability: From 1D to 4D for 90–22 nm by Artur Balasinski

By Artur Balasinski

This booklet explains built-in circuit layout for manufacturability (DfM) on the product point (packaging, functions) and applies engineering DfM ideas to the newest criteria of product improvement at 22 nm know-how nodes. it's a worthy consultant for structure designers, packaging engineers and caliber engineers, masking DfM improvement from 1D to 4D, related to IC layout circulate setup, most sensible practices, hyperlinks to production and product definition, for method applied sciences all the way down to 22 nm node, and product households together with stories, common sense, system-on-chip and system-in-package.

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G. ranging from ±1 to ±4 nm, with would correspond to the worst case gate lengths of 32 nm + EPE_Tolerance. Cell delays are mapped to EPE tolerance using circuit simulation but neglecting the dependence of delay on input slew. Expected mask cost for each cell type can now be extracted as a function of EPE tolerance. Model-based OPC using Calibre on individual cells is followed by fracturing to obtain MEBES data volume for each pair (cell, tolerance). Though cell corrections depend on placement environment, standalone OPC is representative of data volume changes with changing EPE tolerance.

Layout translation based on fast but poor verification carries a risk to the project RoI that a lot of effort would be spent on debugging both correction algorithms and the suboptimal design. 2 Double Patterning with Hard Mask Improving resolution of pattern transfer from design to wafer is a fundamental challenge for DfM. Masking structures and methodologies that enable printing layout geometries as small as 50 % of the critical dimension (CD) of the photolithography tool in the fab, are in high demand.

1 Performance-Driven OPC for Mask Cost Reduction ITRS Roadmap consistently considers microprocessor (MPU) gate lengths and highly controllable gate CD to be two critical issues for the continuation of Moore’s Law cost and integration trajectories [4]. 1), resolution enhancement techniques (RETs) such as optical proximity correction (OPC) and phase shift masks (PSM) are applied to an increasing number of design layers with increasing aggressiveness. Unfortunately, OPC also adds variability [33].

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