By A. B.; Krainov, V.; Leggett, Anthony J.(translator) Migdal

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As the threshold region is approached, a strong increase in the coherence time is observed. While below threshold the value lies between 20 and 30 ps for all three curves, the coherence time is found to increase slower with increasing pump power in cavities with larger spontaneous emission coupling: At comparable points on the input/output curves, we ﬁnd that devices with a larger β factor display shorter coherence times. An illustrative explanation is that ﬂuctuations introduced by spontaneous emission processes decrease the coherence in the system, and at higher β values more spontaneous emission is coupled into the laser mode.

Since most of the results presented in this book are obtained with SK dots, this growth mode will be discussed in some detail in Sect. , In(Ga)As on GaAs(001) substrates. Another successful method to conﬁne the motion of charge carriers is to exploit thickness ﬂuctuations which naturally occur during the epitaxial growth of thin quantum wells (QWs). The combination of SK growth with selective in situ etching opens up the opportunity to fabricate unstrained QDs with large conﬁnement, which is not possible with the SK mode.

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